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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD845 DESCRIPTION With MT-200 package Complement to type 2SB755 High transition frequency High breakdown voltage :VCEO=150V(min) APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 150 Collector-base voltage Open emitter Collector-emitter voltage Open base 150 5 12 1.2 TC=25ae 120 150 -55~150 Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Open collector UNIT V V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.1A; IB=0 IE=10mA; IC=0 IC=5 A;IB=0.5 A IC=5A ; VCE=5V VCB=150V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=10V 55 20 MIN 150 5 TYP. 2SD845 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE fT MAX UNIT V V 2.0 1.5 -50 -50 160 |I |I V V A A hFE classifications R 55-110 O TOR NDU ICO E SEM ANG INCH 80-160 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD845 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 |
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